理学院数理讲坛（2018年第34讲）
报告题目：金属氧化物薄膜晶体管(IGZO TFT)及稳定性研究与讨论
报告人： 刘文军 青年研究员
单 位： 复旦大学
报告时间：2018年8月22日（星期三）9:00-10:00
报告地点：理学院116
报告摘要：
Thin-film transistors (TFTs) are core building blocks to control the millions of sub-pixels in the backplanes of liquid crystal displays (LCDs) and active-matrix organic light-emitting diode (OLED) displays. The past several years have witnessed impressive growth in TFT technologies, driven by an insatiable demand for new generation ultra-high-definition (UHD) displays with increasing panel size and the newly-emerging flexible displays with revolutionary design.1-4 Nevertheless, amorphous silicon TFTs have reached technical limits, owing to their low electrical efficiency. Metal oxides are versatile materials with controllable electronic functionality ranging from conducting, semiconducting to insulating. Oxide TFTs have thus attracted great interest as an alternative of LTPS to drive the next generation UHD displays from small-sized smartphones to large panel TV’s. However, the device performance of existing IGZO TFTs is modest and often exhibits trade-offs between mobility and other parameters; thus, the current IGZO TFTs can’t meet the high-pixel-density and low-power consumption requirements for the battery-powered mobile devices like smartphones. In this presentation, the fabrication process and certain key reliability issues of the novel metal oxide thin film transistor will be discussed in detail.
报告人简介：